Optoelectronic and nanosized features of nanostructured porous silicon

Authors

  • К.К. Dikhanbaev al-Farabi Kazakh National University
  • A.B. Bekezhanova al-Farabi Kazakh National University
  • S.B. Ikramova al-Farabi Kazakh National University
  • B.A. Khaniev al-Farabi Kazakh National University
  • I.S. Tleubaeva al-Farabi Kazakh National University

DOI:

https://doi.org/10.51301/vest.su.2021.i4.14

Keywords:

silicon, porous silicon, nanostructures, anodization current density, photoluminescence, shift of the Raman spectrum, light-transmission factor

Abstract

This paper considers the optoelectronic properties of porous nanostructured silicon obtained by electrochemical etching method. It was noted that the electrolyte concentration affects the depth of porosity, while the anodizing current density affects the density and size of crystallites, as well as the photoluminescence spectra. The results of the Raman measurement showed a low-frequency shift of the wavenumber on the 504 cm-1 line, which changes the frequency difference Δω to 16 cm-1 wavenumber units, while the cross-sectional diameter of the nanocrystallites is distributed from 2.3 nm to 4.3 nm.

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Published

2021-08-31

How to Cite

Диханбаев, К. . . . . ., Бекежанова, А. . . . . ., Икрамова, С. ., Ханиев, Б. . . . . . ., & Тилеубаева, И. . (2021). Optoelectronic and nanosized features of nanostructured porous silicon. Engineering Journal of Satbayev University, 143(4), 110–116. https://doi.org/10.51301/vest.su.2021.i4.14

Issue

Vol. 143 No. 4 (2021): Vestnik KazNRTU

Section

Physics and Mathematics

License

Copyright (c) 2021 VESTNIK KAZNRTU

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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